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SQH47N60CM
Features
• Low on-Resistance: R DS (on) =0.068Ω(typ.)
• Fast-Recovery body diode
• 100% Avalanche Test
• Extremely Low Reverse Recovery Charge
• Ultra Low Gate Charge (typ.Qg=180nC)
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Describe
SQH47N60CM
600V 47A N-channel MOSFET With Fast-Recovery
Applications
•DC-DC Converters and AC-DC Power Supply
Description
SQH47N60CM is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.
SQH47N60CM is suitable for AC/DC power conversion in switching mode operation for higher efficiency
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