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SUNNYCHIP SEMICONDUCTOR CO.LTD

025-52769170

CH / EN

TEL:025-52769170
FAX:025-52769171
ADD:105 gaohu road, jiangning district, nanjing city

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SQH12N90

900V 12A N-channel Enhancement Mode Power MOSFET Features • Typical on-Resistance: R DS (on) =0.72Ω • High Blocking Voltage • 100% Avalanche Test • Good Stability and Uniformity with High E AS

SQAF3N130

1300V 3A N-channel Enhancement Mode Power MOSFET Features • Typical on-Resistance: R DS (on) =4.0Ω • High Blocking Voltage • 100% Avalanche Test • Good Stability and Uniformity with High E AS • Special Process Technology for high ESD Capability

SQA60N30

300V 60A N-channel Enhancement Mode Power MOSFET Features • Typical on-Resistance: R DS (on) =32mΩ • High Blocking Voltage • 100% Avalanche Test • Good Stability and Uniformity with High E AS

SQP3N100C/SQPF3N100C

1000V 3A N-channel Enhancement Mode Power MOSFET Features • Lower on-Resistance: R DS (on) =3.0Ω • Good Stability and Uniformity with High E AS • 100% Avalanche Test • Special Process Technology for High ESD Capability

SQP4N90C/SQPF4N90C

900V 4A N-channel Enhancement Mode Power MOSFET Features • Lower on-Resistance: R DS (on) =2.3Ω • Good Stability and Uniformity with High E AS • 100% Avalanche Test • Special Process Technology for High ESD Capability

SQA28N50

500V 28A N-channel Enhancement Mode Power MOSFET Features • Low on-Resistance: R DS (on) =0.19Ω(max.) • Special Process Technology for High ESD Capability • 100% Avalanche Test • Good Stability and Uniformity with High E AS
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