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SQH12N90
900V 12A N-channel Enhancement Mode Power MOSFET
Features
• Typical on-Resistance: R DS (on) =0.72Ω
• High Blocking Voltage
• 100% Avalanche Test
• Good Stability and Uniformity with High E AS
SQAF3N130
1300V 3A N-channel Enhancement Mode Power MOSFET
Features
• Typical on-Resistance: R DS (on) =4.0Ω
• High Blocking Voltage
• 100% Avalanche Test
• Good Stability and Uniformity with High E AS
• Special Process Technology for high ESD Capability
SQA60N30
300V 60A N-channel Enhancement Mode Power MOSFET
Features
• Typical on-Resistance: R DS (on) =32mΩ
• High Blocking Voltage
• 100% Avalanche Test
• Good Stability and Uniformity with High E AS
SQP3N100C/SQPF3N100C
1000V 3A N-channel Enhancement Mode Power MOSFET
Features
• Lower on-Resistance: R DS (on) =3.0Ω
• Good Stability and Uniformity with High E AS
• 100% Avalanche Test
• Special Process Technology for High ESD Capability
SQP4N90C/SQPF4N90C
900V 4A N-channel Enhancement Mode Power MOSFET
Features
• Lower on-Resistance: R DS (on) =2.3Ω
• Good Stability and Uniformity with High E AS
• 100% Avalanche Test
• Special Process Technology for High ESD Capability
SQA28N50
500V 28A N-channel Enhancement Mode Power MOSFET
Features
• Low on-Resistance: R DS (on) =0.19Ω(max.)
• Special Process Technology for High ESD Capability
• 100% Avalanche Test
• Good Stability and Uniformity with High E AS
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