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SUNNYCHIP SEMICONDUCTOR CO.LTD

025-52769170

CH / EN

TEL:025-52769170
FAX:025-52769171
ADD:105 gaohu road, jiangning district, nanjing city

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S2F200N40S-NI

400V Non-isolation FRD Module Features • Repetitive Reverse Voltage : VRRM = 400V • Low Forward Voltage : VF(typ.) = 1.16V • Average Forward Current :IF(Av.)= 200A@ TC = 100℃ • Ultra-Fast Reverse Recovery Time : trr(typ.) = 45ns • Extensive Characterization of Recovery Parameters • Reduced EMI and RFI • Non-isolation Type Package • 175℃ Operating Junction Temperature • Built-in Dual FRD Construction

S2F240N30NI

300V Non-isolation FRD Module Features • Repetitive Reverse Voltage: V RRM = 300V • Low Forward Voltage: V F (typ.) = 1.1V @ I F =240A • Average Forward Current: I F(AV) =240A @ T C =100℃ • Ultrafast Reverse Recovery Time: t rr (typ.) = 78ns • Extensive Characterization of Recovery Parameters • Reduced EMI and RFI • Non-isolation Type Package • 175℃ Operating Junction Temperature • Built-in Dual FRD Construction

SA2F100S60S

600V Isolation FRD Module Features • Repetitive Reverse Voltage: V RRM = 600V • Low Forward Voltage: V F (typ.) = 1.3V @ I F =100A • Average Forward Current: I F(AV) = 100A @ T C =100℃ • Reverse Recovery Time: t rr (typ.) =130ns • Extensive Characterization of Recovery Parameters • Reduced EMI and RFI • Isolation Type Package • 150℃ Operating Junction Temperature • Built-in N/P-common Dual FRD Construction

SAC2F100N/P60S

600V Isolation FRD Module Features • Repetitive Reverse Voltage: V RRM = 600V • Low Forward Voltage: V F (typ.) = 1.3V @ I F =100A • Average Forward Current: I F(AV) = 100A @ T C =100℃ • Reverse Recovery Time: t rr (typ.) =130ns • Extensive Characterization of Recovery Parameters • Reduced EMI and RFI • Isolation Type Package • 150℃ Operating Junction Temperature • Built-in N/P-common Dual FRD Construction

SAC2F120N40S

400V Isolation FRD Module Features • Repetitive Reverse Voltage: V RRM = 400V • Low Forward Voltage: V F (typ.) = 1.2V @ I F =120A • Average Forward Current: I F(AV) =120A @ T C =100℃ • Ultrafast Reverse Recovery Time: t rr (typ.) =80ns • Extensive Characterization of Recovery Parameters • Reduced EMI and RFI •175℃ Operating Junction Temperature • Built-in Dual FRD Construction

SAC2F150N40S

400V Isolation FRD Module Features • Repetitive Reverse Voltage: V RRM = 400V • Low Forward Voltage: V F (typ.) = 1.1V @ I F =150A • Average Forward Current: I F(AV) =150A @ T C =100℃ • Ultrafast Reverse Recovery Time: t rr (typ.) =85ns • Extensive Characterization of Recovery Parameters • Reduced EMI and RFI •175℃ Operating Junction Temperature • Built-in Dual FRD Construction
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